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AMMC – 6408 PDF

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Typical Gain and Reverse Isolation Figure 2.

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Vofs can be measured at a single reference temperature. Typical ESD diode current versus diode voltage for connected diodes in series is shown in Figure Negative supply is used for the DC gate biasing. The bonding diagram for the recommended assembly is shown in Figure Data subject to change. There are three methods to calculate Vofs: Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.

This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 9. The drift error will be less than 0.

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Typical IM3 level and Ids vs. This method gives an error close to the method 1.

Vofs can either be characterized over temperature and stored in a lookup table, or it can be measured at two amcm and a linear fit used to calculate Vofs at any temperature. Muting can be accomplished by setting Vgg to the pinch-off voltage Vp. Small signal Gain of 18dB? Vofs can be measured before each detector measurement by removing or switching off the power source and measuring Vref – Vdet.

Electro Discharge Damage and Control. Minor improvements in performance are possible depending on the application.

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Junction operating temperature will directly affect the device MTTF. No ground wires are needed since ground connections are made with plated through-holes to the backside of the device.

A typical measured detector voltage versus output power at ammf is shown Figure In a finalized package form, Vd1 and Vd2 terminals are commonly connected to the Vdd terminal. An optional output power detector network is also provided. The drain bias voltage range is 3 to 5V.

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Typical ESD diode current versus diode voltage for connected diodes in series Figure Typical S11 over temperature Figure For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.

Operation in excess of any one of these conditions may result in permanent damage to this device. Typical IM3 level vs.

AMMC-6408 6-18 GHz 1W Power Amplifier

Broadband Wireless Access including This method gives an error due to temperature drift of less than 0. Frequency range 4608 to 18 GHz? Integrated RF power detector? Typical S22 over temperature Figure These 6048 apply to each individual FET 5. A single DC gate supply connected to Vg will bias all gain stages. Wide Frequency Range GHz?

Observe Precautions for handling electrostatic sensitive devices. Input port partially matched For narrowband applications, customer may obtain optimum matching and gain with an additional matching circuit? This data represents package part performances, and does not contain test fixture losses.